? 2010 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 22 a i dm t c = 25 c, pulse width limited by t jm 50 a i a t c = 25 c 22 a e as t c = 25 c 1.5 j p d t c = 25 c 700 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, rms t = 1 minute 2500 v~ i isol 1ma t = 1 second 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 30 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 1000 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 50 a t j = 125 c 1 ma r ds(on) v gs = 20v, i d = 0.5 ? i dss , note 1 600 m linear tm power mosfet w/ extended fbsoa n-channel enhancement mode avalanche rated IXTN22N100L v dss = 1000v i d25 = 22a r ds(on) 600m ds99811b(10/10) features ? minibloc with aluminium nitride isolation ? designed for linear operation ? international standard package ? avalanche rated ? molding epoxy meets ul94 v-0 flammability classification advantages ? easy to mount ? space savings ? high power density applications ? programmable loads ? current regulators ? dc-dc converters ? battery chargers ? dc choppers ? temperature and lighting controls either source terminal s can be used as the source terminal or the kelvin source (gate return) terminal. minibloc e153432 g d s s g = gate d = drain s = source
ixys reserves the right to change limits, test conditions, and dimensions. IXTN22N100L ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. sot-227b (ixtn) outline (m4 screws (4x) supplied) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i dss , note 1 4.5 7.0 9.5 s c iss 7050 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 600 pf c rss 100 pf t d(on) 36 ns t r 35 ns t d(off) 80 ns t f 50 ns q g(on) 270 nc q gs v gs = 15v, v ds = 0.5 ? v dss , i d = 0.5 ? i dss 70 nc q gd 110 nc r thjc 0.18 c/w r thcs 0.05 c/w safe-operating-area specification symbol test conditions characteristic values min. typ. max. soa v ds = 800v, i d = 0.3a, t c = 90 c , tp = 5s 240 w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 22 a i sm repetitive, pulse width limited by t jm 50 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 1000 ns resistive switching times v gs = 15v, v ds = 0.5 ? v dss , i d = 0.5 ? i dss r g = 2 (external) i f = i s , -di/dt = 100a/ s v r = 100v, v gs = 0v
? 2010 ixys corporation, all rights reserved IXTN22N100L fig. 1. output characteristics @ t j = 25oc 0 2 4 6 8 10 12 14 16 18 20 22 0123456789101112 v ds - volts i d - amperes v gs = 20v 14v 8 v 9 v 7 v 6 v 10 v 12 v fig. 2. extended output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 20v 14v 10 v 8 v 7 v 12 v 9 v fig. 3. output characteristics @ t j = 125oc 0 2 4 6 8 10 12 14 16 18 20 22 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 20v 12v 5 v 6v 8v 7v 9v 10v fig. 4. r ds(on) normalized to i d = 11a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 20v i d = 22a i d = 11a fig. 5. r ds(on) normalized to i d = 11a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 0 4 8 121620242832364044 i d - amperes r ds(on) - normalized v gs = 20v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 5 10 15 20 25 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTN22N100L fig. 7. input admittance 0 2 4 6 8 10 12 14 16 18 20 34567891011 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 35 40 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 40 80 120 160 200 240 280 q g - nanocoulombs v gs - volts v ds = 500v i d = 11a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w
? 2010 ixys corporation, all rights reserved IXTN22N100L ixys ref: t_22n100l(8n)3-19-10 fig. 13. forward-bias safe operating area @ t c = 25oc 0 1 10 100 10 100 1,000 10,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc fig. 14. forward-bias safe operating area @ t c = 90oc 0.1 1 10 100 10 100 1,000 10,000 v ds - volts i d - amperes t j = 150oc t c = 90oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc
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